Tuesday, September 23, 2014

RENA and SoLayTec’s InPERC technology reaches 18 percent efficiency on mc-Si at a major Chinese cell manufacturer

SHANGHAI, CHINA & GITENBACH, GERMANY: RENA’s Inline technology for Passivated Emitter and Rear Cell, "InPERC" is currently being implemented at a major customer’s site on pilot production level.

With top cell efficiencies of 18 percent on multicrystalline wafers, RENA successfully transferred its complete InPERC solution comprising rear-side smoothing, passivation, laser ablation, and overall process integration to its customer’s facility.

SoLayTec’s InPassion Atomic Layer Deposition (ALD) tool is a core component of the InPERC high efficiency concept. Its spatial ALD technology allows ultra-fast deposition of aluminium-oxide (Al2O3) layers with outstanding uniformities and passivation properties. This is key for reaching high cell efficiencies while at the same time minimizing the requested layer thickness and the total process costs.

RENA’s and SoLayTec’s customer adopted the InPERC solution for its high performance pilot line. The top efficiencies of 18 percent were achieved without using a selective emitter concept and are already on par with the target set up by the Chinese government for new high efficiency cell lines.

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